Datasheet

2004 Nov 08 5
NXP Semiconductors Product data sheet
80 V, 4 A
PNP low V
CEsat
(BISS) transistor
PBSS5480X
THERMAL CHARACTERISTICS
Notes
1. Operated under pulsed conditions; pulse width t
p
≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
5. Device mounted on a 7 cm
2
ceramic printed-circuit board, 1 cm
2
single-sided copper, tin-plated.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air
notes 1 and 2 50 K/W
note 2 225 K/W
note 3 125 K/W
note 4 90 K/W
note 5 80 K/W
R
th(j-s)
thermal resistance from junction to soldering point 16 K/W
006aaa232
10
1
10
2
10
3
Z
th
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Mounted on FR4 printed-circuit board; standard footprint.