Datasheet

2004 Nov 08 3
NXP Semiconductors Product data sheet
80 V, 4 A
PNP low V
CEsat
(BISS) transistor
PBSS5480X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
2. Operated under pulsed conditions; pulse width t
p
10 ms; duty cycle δ 0.1.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
5. Device mounted on a 7 cm
2
ceramic printed-circuit board, 1 cm
2
single-sided copper, tin-plated.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 80 V
V
CEO
collector-emitter voltage open base 80 V
V
EBO
emitter-base voltage open collector 5 V
I
C
collector current (DC) note 1 4 A
I
CM
peak collector current t
p
1 ms or limited by T
j(max)
10 A
I
CRP
repetitive peak collector current t
p
10 ms; δ 0.1 6 A
I
B
base current (DC) 1 A
I
BM
peak base current t
p
1 ms 2 A
P
tot
total power dissipation T
amb
25 °C
notes 2 and 3 2.5 W
note 3 0.55 W
note 4 1 W
note 1 1.4 W
note 5 1.6 W
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
ambient temperature 65 +150 °C