Datasheet
2004 Nov 08 2
NXP Semiconductors Product data sheet
80 V, 4 A
PNP low V
CEsat
(BISS) transistor
PBSS5480X
FEATURES
• High h
FE
and low V
CEsat
at high current operation
• High collector current I
C
: 4 A
• High efficiency leading to less heat generation.
APPLICATIONS
• Medium power peripheral drivers (e.g. fans and motors)
• Strobe flash units for digital still cameras and mobile
phones
• Inverter applications (e.g. TFT displays)
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers.
DESCRIPTION
PNP low V
CEsat
(BISS) transistor in a SOT89 (SC-62)
plastic package.
NPN complement: PBSS4480X.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
TYPE NUMBER MARKING CODE
(1)
PBSS5480X *1Z
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
sym07
9
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −80 V
I
C
collector current (DC) −4 A
I
CM
peak collector current −10 A
R
CEsat
equivalent on-resistance 75 mΩ
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS5480X SC-62 plastic surface mounted package; collector pad for
good heat transfer; 3 leads
SOT89