Datasheet

2004 Nov 08 2
NXP Semiconductors Product data sheet
80 V, 4 A
PNP low V
CEsat
(BISS) transistor
PBSS5480X
FEATURES
High h
FE
and low V
CEsat
at high current operation
High collector current I
C
: 4 A
High efficiency leading to less heat generation.
APPLICATIONS
Medium power peripheral drivers (e.g. fans and motors)
Strobe flash units for digital still cameras and mobile
phones
Inverter applications (e.g. TFT displays)
Power switch for LAN and ADSL systems
Medium power DC-to-DC conversion
Battery chargers.
DESCRIPTION
PNP low V
CEsat
(BISS) transistor in a SOT89 (SC-62)
plastic package.
NPN complement: PBSS4480X.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
TYPE NUMBER MARKING CODE
(1)
PBSS5480X *1Z
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
sym07
9
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 80 V
I
C
collector current (DC) 4 A
I
CM
peak collector current 10 A
R
CEsat
equivalent on-resistance 75 mΩ
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS5480X SC-62 plastic surface mounted package; collector pad for
good heat transfer; 3 leads
SOT89