Datasheet

PBSS5440D_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 14 December 2009 6 of 13
NXP Semiconductors
PBSS5440D
40 V PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
= 25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −30 V; I
E
= 0 A - - −0.1 μA
V
CB
= −30 V; I
E
= 0 A; T
j
=150°C- - −50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −30 V; V
BE
= 0 V - - −0.1 μA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
= 0 A - - −0.1 μA
h
FE
DC current gain V
CE
= −2 V; I
C
= −0.5 A 200 - -
V
CE
= −2 V; I
C
= −1 A
[1]
200 - -
V
CE
= −2 V; I
C
= −2 A
[1]
175 - -
V
CE
= −2 V; I
C
= −4 A
[1]
80 - -
V
CE
= −2 V; I
C
= −6 A
[1]
30 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA - −46 −60 mV
I
C
= −1 A; I
B
= −50 mA - −70 −110 mV
I
C
= −2 A; I
B
= −200 mA - −120 −180 mV
I
C
= −4 A; I
B
= −400 mA
[1]
- −220 −300 mV
I
C
= −6 A; I
B
= −600 mA
[1]
- −320 −450 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −6 A; I
B
= −600 mA
[1]
- 5575mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA - −0.8 −0.85 V
I
C
= −1 A; I
B
= −50 mA - −0.84 −0.9 V
I
C
= −1 A; I
B
= −100 mA
[1]
- −0.84 −1V
I
C
= −4 A; I
B
= −400 mA
[1]
- −1.0 −1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2 V; I
C
= −2 A - −0.8 −1.0 V
t
d
delay time V
CC
= −10 V; I
C
= −2 A;
I
Bon
= −0.1 A; I
Boff
=0.1A
-12-ns
t
r
rise time - 43 - ns
t
on
turn-on time - 55 - ns
t
s
storage time - 240 - ns
t
f
fall time - 80 - ns
t
off
turn-off time - 320 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −0.1 A;
f=100MHz
-110-MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= i
e
= 0 A;
f=1MHz
-50-pF