Datasheet

PBSS5420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 29 September 2008 6 of 14
NXP Semiconductors
PBSS5420D
20 V, 4 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤ 0.02.
Table 7. Characteristics
T
amb
= 25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −20 V; I
E
= 0 A - - −0.1 µA
V
CB
= −20 V; I
E
= 0 A;
T
j
= 150 °C
--−50 µA
I
CES
collector-emitter
cut-off current
V
CE
= −20 V; V
BE
= 0 V - - −0.1 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
= 0 A - - −0.1 µA
h
FE
DC current gain V
CE
= −2 V; I
C
= −0.5 A 250 400 -
V
CE
= −2 V; I
C
= −1 A
[1]
250 400 -
V
CE
= −2 V; I
C
= −2 A
[1]
200 330 -
V
CE
= −2 V; I
C
= −4 A
[1]
120 200 -
V
CE
= −2 V; I
C
= −6 A
[1]
80 130 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA - −35 −50 mV
I
C
= −1 A; I
B
= −50 mA - −65 −90 mV
I
C
= −2 A; I
B
= −200 mA - −110 −150 mV
I
C
= −4 A; I
B
= −400 mA
[1]
- −200 −280 mV
I
C
= −6 A; I
B
= −600 mA
[1]
- −300 −420 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −4 A; I
B
= −400 mA
[1]
- 5070mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA - −0.8 −0.85 V
I
C
= −1 A; I
B
= −50 mA - −0.84 −0.9 V
I
C
= −1 A; I
B
= −100 mA
[1]
- −0.84 −1V
I
C
= −4 A; I
B
= −400 mA
[1]
- −1.0 −1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2 V; I
C
= −2 A - −0.8 −1V
t
d
delay time V
CC
= −12.5 V; I
C
= −3 A;
I
Bon
= −0.15 A;
I
Boff
= 0.15 A
-10-ns
t
r
rise time - 35 - ns
t
on
turn-on time - 45 - ns
t
s
storage time - 200 - ns
t
f
fall time - 80 - ns
t
off
turn-off time - 280 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −0.1 A;
f = 100 MHz
- 80 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-80-pF