Datasheet

PBSS5420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 29 September 2008 2 of 14
NXP Semiconductors
PBSS5420D
20 V, 4 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
132
4
56
4
3
1, 2, 5, 6
sym030
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5420D SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codes
Type number Marking code
PBSS5420D D5
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −20 V
V
CEO
collector-emitter voltage open base - −20 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current
[1]
- −4A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −15 A
I
B
base current - −0.8 A
I
BM
peak base current single pulse;
t
p
≤ 1ms
- −2A
P
tot
total power dissipation T
amb
≤ 25 °C
[2]
- 360 mW
[3]
- 600 mW
[4]
- 750 mW
[1]
- 1.1 W
[2][5]
- 2.5 W