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1. Product proﬁle

1.1 General description

PNP low V

CEsat

Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74)

Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4420D.

1.2 Features

n Very low collector-emitter saturation resistance

n Ultra low collector-emitter saturation voltage

n 4 A continuous collector current

n Up to 15 A peak current

n High efﬁciency leading to less heat generation

1.3 Applications

n Power management functions

n Charging circuits

n DC-to-DC conversion

n MOSFET gate driving

n Power switches (e.g. motors, fans)

n Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al

, standard footprint.

[2] Pulse test: t

≤ 300 µs; δ≤ 0.02.

PBSS5420D

20 V, 4 A PNP low V

CEsat

(BISS) transistor

Rev. 02 — 29 September 2008 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −20 V

collector current

[1]

--−4A

peak collector current single pulse;

≤ 1ms

--−15 A

CEsat

collector-emitter saturation

resistance

= −4A;

= −400 mA

[2]

- 5070mΩ

Summary of content (14 pages)

PAGE 1
PBSS5420D 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 02 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4420D. 1.
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PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector Simplified outline 6 5 Graphic symbol 4 1, 2, 5, 6 3 1 2 3 4 sym030 3. Ordering information Table 3. Ordering information Type number PBSS5420D Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4.
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PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6.
PAGE 5
PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 006aaa272 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa273 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.
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PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO Conditions collector-base cut-off VCB = −20 V; IE = 0 A current VCB = −20 V; IE = 0 A; Tj = 150 °C Typ Max Unit - - −0.1 µA - - −50 µA ICES collector-emitter cut-off current VCE = −20 V; VBE = 0 V - - −0.1 µA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −0.
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PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 006aaa336 1000 hFE 006aaa342 −10 IB (mA) = −200 −180 −160 −140 −120 IC (A) 800 −8 (1) −100 −80 −60 −6 600 −40 (2) −20 −4 400 (3) −2 200 0 −10−1 −1 −10 −102 −103 0 −104 −105 IC (mA) 0 VCE = −2 V −0.4 −0.8 −1.2 −1.6 −2.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aaa337 −1.6 Fig 6.
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PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 006aaa338 −10 006aaa339 −10 VCEsat (V) VCEsat (V) −1 −1 (1) −10−1 −10−1 (2) (3) (1) −10−2 (2) −10−2 (3) −10−3 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) −10−3 −10−1 −1 −102 −103 −104 −105 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9.
PAGE 9
PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −12.5 V; IC = −3 A; IBon = −0.15 A; IBoff = 0.15 A Fig 14.
PAGE 10
PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 11
PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 11. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 16. Reflow soldering footprint SOT457 (SC-74) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 17.
PAGE 12
PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5420D_2 20080929 Product data sheet - PBSS5420D_1 Modifications: PBSS5420D_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • Legal texts have been adapted to the new company name where appropriate.
PAGE 13
PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS5420D NXP Semiconductors 20 V, 4 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .