Datasheet

2003 May 13 6
NXP Semiconductors Product data sheet
50 V low V
CEsat
PNP transistor
PBSS5350Z
handbook, halfpage
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
−2
−1000
0
−200
−400
−600
−800
−0.4 −0.8 −1.2 −1.6
MGW171
V
CE
(V)
I
C
(mA)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= −3.96 mA.
(2) I
B
= −3.63 mA.
(3) I
B
= −3.30 mA.
(4) I
B
= −2.97 mA.
(5) I
B
= −2.64 mA.
(6) I
B
= −2.31 mA.
(7) I
B
= −1.98 mA.
(8) I
B
= −1.65 mA.
(9) I
B
= −1.32 mA.
(10) I
B
= −0.99 mA.
(11) I
B
= −0.66 mA.
(12) I
B
= −0.33 mA.
T
amb
= 25 °C.
handbook, halfpage
0
(4)
(5)
(6)
(7)
(8)
(9)
(10)
−2
−5
0
−1
−2
−3
−4
−0.4 −0.8 −1.2 −1.6
MGW172
V
CE
(V)
I
C
(A)
(1) (2) (3)
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= −250 mA.
(2) I
B
= −225 mA.
(3) I
B
= −200 mA.
(4) I
B
= −175 mA.
(5) I
B
= −150 mA.
(6) I
B
= −125 mA.
(7) I
B
= −100 mA.
(8) I
B
= −75 mA.
(9) I
B
= −50 mA.
(10) I
B
= −25 mA.
T
amb
= 25 °C.
handbook, halfpage
10
3
10
2
10
1
10
−1
−10
−1
MGU390
−1 −10
I
C
(mA)
R
CEsat
(Ω)
−10
2
−10
3
−10
4
(1)
(3)
(2)
Fig.8 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C. (2) T
amb
= 25 °C. (3) T
amb
= −55 °C.