DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product data sheet Supersedes data of 2003 Jan 20 2003 May 13
NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High collector current capability: IC and ICM VCEO collector-emitter voltage −50 V IC collector current (DC) −3 A • Higher efficiency leading to less heat generation ICM peak collector current −5 A • Reduced PCB area requirements compared to DPAK.
NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector-base cut-off current VCB = −50 V; IE = 0 MAX. UNIT − − −100 nA − − −50 μA − − −100 nA IC = −500 mA 200 − − IC = −1 A; note 1 200 − − IC = −2 A; note 1 emitter-base cut-off current VEB = −5 V; IC = 0 hFE DC current gain VCE = −2 V; collector-emitter saturation voltage TYP.
NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z MGW167 1000 MGW168 −1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 800 (1) −0.8 (1) 600 (2) (2) 400 −0.4 (3) (3) 200 0 −10 −1 −1 −10 −102 0 −10 −1 −103 −104 I C (mA) −1 VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z MGW171 −1000 handbook, halfpage (3) −800 (1) (2) (3) IC (A) (2) IC (mA) MGW172 −5 (1) handbook, halfpage (4) (5) (6) (7) −4 (4) (8) (5) (9) (6) −600 −3 (7) (10) (8) −400 −2 (9) (10) (11) −200 −1 (12) 0 0 −0.4 0 −0.8 −1.2 −1.6 −2 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) (5) IB = −2.64 mA. (6) IB = −2.31 mA. (7) IB = −1.98 mA. (8) IB = −1.65 mA. (9) IB = −1.32 mA. (10) IB = −0.99 mA.
NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.
NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
