Datasheet

2004 Jan 09 4
NXP Semiconductors Product data sheet
50 V; 3 A NPN low V
CEsat
(BISS) transistor
PBSS4350T
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= 50 V − − 100 nA
I
E
= 0; V
CB
= 50 V; T
j
= 150 °C − − 50 μA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= 5 V − − 100 nA
h
FE
DC current gain I
C
= 100 mA; V
CE
= 2 V 300 − −
I
C
= 500 mA; V
CE
= 2 V 300 − −
I
C
= 1 A; V
CE
= 2 V; note 1 300 − −
I
C
= 2 A; V
CE
= 2 V; note 1 200 − −
I
C
= 3 A; V
CE
= 2 V; note 1 100 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA − − 80 mV
I
C
= 1 A; I
B
= 50 mA − − 160 mV
I
C
= 2 A; I
B
= 100 mA; note 1 − − 280 mV
I
C
= 2 A; I
B
= 200 mA; note 1 − − 260 mV
I
C
= 3 A; I
B
= 300 mA; note 1 − − 370 mV
R
CEsat
equivalent on-resistance I
C
= 2 A; I
B
= 200 mA; note 1 − 100 130 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= 2 A; I
B
= 100 mA; note 1 − − 1.1 V
I
C
= 3 A; I
B
= 300 mA; note 1 − − 1.2 V
V
BEon
base-emitter turn-on voltage I
C
= 1 A; V
CE
= 2 V; note 1 1.2 − − V
f
T
transition frequency I
C
= 100 mA; V
CE
= 5 V;
f
= 100 MHz
100 − − MHz
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz − − 25 pF