Datasheet

2004 Jan 09 2
NXP Semiconductors Product data sheet
50 V; 3 A NPN low V
CEsat
(BISS) transistor
PBSS4350T
FEATURES
• Low collector-emitter saturation voltage V
CEsat
and
corresponding low R
CEsat
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.
APPLICATIONS
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT23 plastic package.
PNP complement: PBSS5350T.
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PBSS4350T ZC*
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 50 V
I
C
collector current (DC) 2 A
I
CRP
repetitive peak collector
current
3 A
R
CEsat
equivalent on-resistance 130 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS4350T − plastic surface mounted package; 3 leads SOT23