Datasheet

PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 3 of 14
NXP Semiconductors
PBSS5350SS
50 V, 2.7 A PNP/PNP low V
CEsat
(BISS) transistor
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 0.75 W
[2]
- 1.2 W
[3]
-2W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
(°C)
−75 17512525 75−25
006aaa967
1.0
1.5
0.5
2.0
2.5
P
tot
(W)
0
(1)
(2)
(3)