Datasheet

PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 2 of 14
NXP Semiconductors
PBSS5350SS
50 V, 2.7 A PNP/PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 3. Pinning
Pin Description Simplified outline Symbol
1 emitter TR1
2 base TR1
3 emitter TR2
4 base TR2
5 collector TR2
6 collector TR2
7 collector TR1
8 collector TR1
4
5
1
8
006aaa976
8765
1234
TR1 TR2
Table 4. Ordering information
Type number Package
Name Description Version
PBSS5350SS SO8 plastic small outline package; 8 leads; body width
3.9 mm
SOT96-1
Table 5. Marking codes
Type number Marking code
PBSS5350SS 5350SS
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - −50 V
V
CEO
collector-emitter voltage open base - −50 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −2.7 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −5A
I
B
base current - −0.5 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 0.55 W
[2]
- 0.87 W
[3]
- 1.43 W