Datasheet

PBSS5350D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 28 June 2011 5 of 12
NXP Semiconductors
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
V
CE
= -2 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
T
amb
= 25 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
T
amb
= 25 °C
V
CE
= -2 V
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig 3. Collector current as a function of
collector-emitter voltage; typical values
Fig 4. Base-emitter voltage as a function of collector
current; typical values
mgw167
0
h
FE
I
C
(mA)
1000
200
400
600
800
10
1
1 10 10
2
10
3
10
4
(1)
(2)
(3)
V
CE
(V)
0.0 –2.0–1.6–0.8 –1.2–0.4
006aac605
–400
–600
–200
–800
–1000
I
C
(mA)
0
I
B
(nA) = –3.96
–0.99
–3.63
–0.66
–1.65
–1.98
–2.31
–2.64
–0.33
–2.97
–1.32
–3.30
V
CE
(V)
0.0 –2.0–1.6–0.8 –1.2–0.4
006aac606
–2
–3
–1
–4
–5
I
C
(A)
0
–25
–75–100
–125
–150
–175
–50
I
B
(mA) = –250
–225
–200
mgw168
0
I
C
(mA)
V
BE
(V)
1.2
0.4
0.8
10
1
1 10 10
2
10
3
10
4
(1)
(2)
(3)