Datasheet

PBSS5350D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 28 June 2011 3 of 12
NXP Semiconductors
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[3] Device mounted on an FR4 4-layer PCB.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -60 V
V
CEO
collector-emitter voltage open base - -50 V
V
EBO
emitter-base voltage open collector - -6 V
I
C
collector current - -3 A
I
CM
peak collector current - -5 A
I
BM
peak base current - -1 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 600 mW
[2]
- 750 mW
[3]
- 1200 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -65 150 °C
T
stg
storage temperature -65 150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
- - 208 K/W
[2]
- - 160 K/W
pulsed; t
p
≤ 50 ms; δ ≤ 0.5.; in free air
[2]
- - 100 K/W