Datasheet

PBSS5330PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 19 April 2010 6 of 15
NXP Semiconductors
PBSS5330PA
30 V, 3 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
= −30 V; I
E
=0A - - −100 nA
V
CB
= −30 V; I
E
=0A;
T
j
= 150 °C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −30 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base
cut-off current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V
[1]
I
C
= −0.5 A 200 320 -
I
C
= −1 A 175 280 450
I
C
= −2 A 140 210 -
I
C
= −3 A 100 160 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA
[1]
- −45 −70 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −90 −130 mV
I
C
= −2A; I
B
= −100 mA
[1]
- −170 −240 mV
I
C
= −3A; I
B
= −300 mA
[1]
- −230 −320 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −3A; I
B
= −300 mA
[1]
- 75 107 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −2A; I
B
= −100 mA
[1]
- −0.89 −1.1 V
I
C
= −3A; I
B
= −300 mA
[1]
- −0.97 −1.2 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −2V; I
C
= −1A
[1]
- −0.75 −1V
t
d
delay time V
CC
= −9V; I
C
= −2A;
I
Bon
= −0.1 A;
I
Boff
=0.1A
-11-ns
t
r
rise time - 59 - ns
t
on
turn-on time - 70 - ns
t
s
storage time - 165 - ns
t
f
fall time - 35 - ns
t
off
turn-off time - 200 - ns
f
T
transition frequency V
CE
= −5V;
I
C
= −100 mA;
f=100MHz
100 165 - MHz
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A; f=1MHz
- 3845pF