Datasheet

2002 Jun 12 2
NXP Semiconductors Product data sheet
20 V low V
CEsat
PNP transistor
PBSS5320D
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT457 (SC-74) plastic
package.
MARKING
TYPE NUMBER MARKING CODE
PBSS5320D 52
PINNING
PIN DESCRIPTION
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
MAM466
T
op view
1, 2, 5,
6
4
3
132
4
56
Fig.1 Simplified outline (SOT457; SC-74) and
symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −20 V
I
C
collector current (DC) −3 A
I
CM
peak collector current −5 A
R
CEsat
equivalent on-resistance 133 mΩ