Datasheet

2004 Nov 04 2
NXP Semiconductors Product data sheet
50 V, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5250X
FEATURES
• SOT89 (SC-62) package
• Low collector-emitter saturation voltage V
CEsat
• High collector current capability: I
C
and I
CM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers
and motors).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT89 plastic package.
NPN complement: PBSS4250X.
MARKING
Note
1. * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
TYPE NUMBER MARKING CODE
(1)
PBSS5250X *1L
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
sym07
9
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −50 V
I
C
collector current (DC) −2 A
I
CM
peak collector current −5 A
R
CEsat
equivalent on-resistance 160 mΩ