Datasheet

2003 Oct 09 3
NXP Semiconductors Product data sheet
50 V, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5250T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −50 V
V
CEO
collector-emitter voltage open base − −50 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −2 A
I
CM
peak collector current single peak − −3 A
I
B
base current (DC) − −300 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 300 mW
T
amb
≤ 25 °C; note 2 − 480 mW
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 417 K/W
in free air; note 2 260 K/W