Datasheet

2002 Feb 28 4
NXP Semiconductors Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5240Y
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
= 0 − −100 nA
V
CB
= −30 V; I
E
= 0; T
j
= 150 °C − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −4 V; I
C
= 0 − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −100 mA 300 −
V
CE
= −2 V; I
C
= −500 mA 260 −
V
CE
= −2 V; I
C
= −1 000 mA 210 −
V
CE
= −2 V; I
C
= −2 000 mA 100 −
V
CEsat
collector-emitter saturation
voltage
I
C
= −100 mA; I
B
= −1 mA − −100 mV
I
C
= −500 mA; I
B
= −50 mA − −110 mV
I
C
= −750 mA; I
B
= −15 mA − −225 mV
I
C
= −1 000 mA; I
B
= −50 mA − −225 mV
I
C
= −2 000 mA; I
B
= −200 mA − −350 mV
V
BEsat
base-emitter saturation
voltage
I
C
= −2 000 mA; I
B
= −200 mA − −1.1 V
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −100 mA − −0.75 V
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0; f = 1 MHz − 40 pF
F
T
transition frequency I
C
= −100 mA; V
CE
= −10 V; f = 100 MHz 100 − MHz