Datasheet

2002 Feb 28 2
NXP Semiconductors Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5240Y
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistors due to enhanced performance.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT363 (SC-88) plastic
package.
NPN complement: PBSS4240Y.
MARKING
Note
1. * = p: made in Hongkong.
* = t: made in Malaysia.
TYPE NUMBER MARKING CODE
(1)
PBSS5240Y 52*
PINNING
PIN DESCRIPTION
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
handbook, halfpage
MAM464
123
654
Top view
3
4
1, 2, 5, 6
Fig.1 Simplified outline (SOT363; SC-88) and
symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −40 V
I
CM
peak collector current −3 A
I
C
collector current (DC) −2 A
R
CEsat
equivalent on-resistance <200 mΩ