Datasheet

2003 Jan 30 6
NXP Semiconductors Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5240V
handbook, halfpage
0
(1)
(2)(3)
(4)
(6)
(8)
I
C
(A)
V
CE
(V)
−1.2
−0.8
−0.4
0
−0.4 −2
−0.8 −1.2 −1.4
MHC468
(9)
(10)
(7)
(5)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= −7 mA.
(2) I
B
= −6.3 mA.
(3) I
B
= −5.6 mA.
(4) I
B
= −4.9 mA.
(5) I
B
= −4.2 mA.
(6) I
B
= −3.5 mA.
(7) I
B
= −2.8 mA.
(8) I
B
= −2.1 mA.
(9) I
B
= −1.4 mA.
(10) I
B
= −0.7 mA.
T
amb
= 25 °C.
handbook, halfpage
0
−
2
−
2.4
−
2
0
−
0.4
−
0.8
−
1.2
−
1.6
−
0.4
V
CE
(V)
I
C
(A)
−
0.8
−
1.2
−
1.6
MHC469
(9)
(7)
(10)
(8)
(1)
(2)
(3)
(4)
(5)
(6)
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= −50 mA.
(2) I
B
= −45 mA.
(3) I
B
= −40 mA.
(4) I
B
= −35 mA.
(5) I
B
= −30 mA.
(6) I
B
= −25 mA.
(7) I
B
= −20 mA.
(8) I
B
= −15 mA.
(9) I
B
= −10 mA.
(10) I
B
= −5 mA.
T
amb
= 25 °C.
handbook, halfpage
MHC470
10
3
10
2
1
10
−1
10
−10
−1
−1
R
CEsat
(Ω)
I
C
(mA)
−10 −10
2
−10
3
−10
4
(2)
(3)
(1)
Fig.8 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C. (2) T
amb
= 25 °C. (3) T
amb
= −55 °C.