Datasheet

2003 Jan 30 2
NXP Semiconductors Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5240V
FEATURES
• Low collector-emitter saturation voltage V
CEsat
• High collector current capability I
C
and I
CM
• High collector current gain (h
FE
) at high I
C
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board area requirements.
APPLICATIONS
• Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD back lighting.
• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps,
LEDs)
– Inductive load drivers (e.g. relay, buzzers and
motors).
DESCRIPTION
PNP transistor providing low V
CEsat
and high current
capability in a SOT666 plastic package.
NPN complement: PBSS4240V.
PINNING
PIN DESCRIPTION
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
handbook, halfpage
123
46
5
Top view
3
1, 2, 5, 6
4
MAM446
Fig.1 Simplified outline (SOT666) and symbol.
MARKING
TYPE NUMBER MARKING CODE
PBSS5240V 52
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −40 V
I
C
collector current (DC) −1.8 A
I
CRP
peak collector current −2 A
R
CEsat
equivalent on-resistance <250 mΩ