Datasheet

2004 Jan 15 6
NXP Semiconductors Product data sheet
40 V, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5240T
handbook, halfpage
0
−3000
−2000
−1000
0
−1 −5−2 −3
I
C
(mA)
V
CE
(V)
−4
MHC065
(10)
(9)
(5)
(6)
(7)
(8)
(1)
(2)
(3)
(4)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= −23.0 mA.
(2) I
B
= −20.7 mA.
(3) I
B
= −18.4 mA.
(4) I
B
= −16.1 mA.
(5) I
B
= −13.8 mA.
(6) I
B
= −11.5 mA.
(7) I
B
= −9.2 mA.
(8) I
B
= −6.9 mA.
(9) I
B
= −4.6 mA.
(10) I
B
= −2.3 mA.
handbook, halfpage
10
3
10
10
2
1
10
−1
MHC069
−10
−1
−1 −10
R
CEsat
(Ω)
−10
2
−10
4
−10
3
I
C
(mA)
(1)
(2)
(3)
Fig.7 Equivalent on-resistance as a function of
collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.