Datasheet

2004 Jan 15 4
NXP Semiconductors Product data sheet
40 V, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5240T
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
= 0 − − −100 nA
V
CB
= −30 V; I
E
= 0; T
j
= 150 °C − − −50 μA
I
BEO
emitter-base cut-off current V
EB
= −4 V; I
C
= 0 − − −100 nA
h
FE
DC current gain V
CE
= −2 V
I
C
= −100 mA 300 450 −
I
C
= −500 mA 260 350 −
I
C
= −1 A 210 290 −
I
C
= −2 A 100 180 −
V
CEsat
collector-emitter saturation voltage I
C
= −100 mA; I
B
= −1 mA − −55 −100 mV
I
C
= −500 mA; I
B
= −50 mA − −70 −110 mV
I
C
= −750 mA; I
B
= −15 mA − −140 −225 mV
I
C
= −1 A; I
B
= −50 mA − −140 −225 mV
I
C
= −2 A; I
B
= −200 mA − −240 −350 mV
R
CEsat
equivalent on-resistance I
C
= −500 mA; I
B
= −50 mA;
note
1
− 160 <220 mΩ
V
BEsat
base-emitter saturation voltage I
C
= −2 A; I
B
= −200 mA − − −1.1 V
V
BE(on)
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −100 mA − − −0.75 V
f
T
transition frequency I
C
= −100 mA; V
CE
= −10 V;
f
= 100 MHz
100 200 − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0;
f
= 1 MHz
− 23 28 pF