Datasheet

2004 Jan 15 2
NXP Semiconductors Product data sheet
40 V, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5240T
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistor.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT23 plastic package.
NPN complement: PBSS4240T.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PBSS5240T ZF*
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −40 V
I
C
collector current (DC) −2 A
I
CM
peak collector current −3 A
R
CEsat
equivalent on-resistance <220 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM256
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS5240T − plastic surface mounted package; 3 leads SOT23