Datasheet

NXP Semiconductors
PBSS5230PAP
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
PBSS5230PAP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 11 January 2013 9 / 17
006aad171
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
10
2
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
4-layer PCB 70 µm, mounting pad for collector 1 cm
2
Fig. 9. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
CB
= -24 V; I
E
= 0 A; T
amb
= 25 °C - - -100 nAI
CBO
collector-base cut-off
current
V
CB
= -24 V; I
E
= 0 A; T
j
= 150 °C - - -50 µA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C - - -100 nA
V
CE
= -2 V; I
C
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
260 370 -
V
CE
= -2 V; I
C
= -500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
210 290 -
V
CE
= -2 V; I
C
= -1 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
160 230 -
h
FE
DC current gain
V
CE
= -2 V; I
C
= -2 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
100 145 -
I
C
= -500 mA; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- -75 -110 mV
I
C
= -1 A; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- -155 -220 mV
V
CEsat
collector-emitter
saturation voltage
I
C
= -2 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- -295 -420 mV