Datasheet

PBSS5220V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 14 December 2009 7 of 13
NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= 55 °C
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 8. Collector-emitter saturation resistance as a
function of collector current; typical values
T
amb
=25°CT
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa430
I
C
(mA)
10
1
10
4
10
3
1 10
2
10
0.6
0.8
0.4
1.0
1.2
V
BEsat
(V)
0.2
(1)
(2)
(3)
006aaa431
I
C
(mA)
10
1
10
4
10
3
1 10
2
10
10
1
10
2
R
CEsat
(Ω)
10
1
(1)
(2)
(3)
006aaa432
V
CE
(V)
0 642
0.8
1.2
0.4
1.6
2.0
I
C
(A)
0
I
B
= 13 mA
10.4 mA
11.7 mA
9.1 mA
6.5 mA
3.9 mA
5.2 mA
2.6 mA
1.3 mA
7.8 mA
006aaa433
I
C
(mA)
10
1
10
4
10
3
1 10
2
10
10
1
10
2
10
3
R
CEsat
(Ω)
10
1
(1)
(2)
(3)