Datasheet
PBSS5220V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 14 December 2009 7 of 13
NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 8. Collector-emitter saturation resistance as a
function of collector current; typical values
T
amb
=25°CT
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa430
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−0.6
−0.8
−0.4
−1.0
−1.2
V
BEsat
(V)
−0.2
(1)
(2)
(3)
006aaa431
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
10
1
10
2
R
CEsat
(Ω)
10
−1
(1)
(2)
(3)
006aaa432
V
CE
(V)
0 −6−4−2
−0.8
−1.2
−0.4
−1.6
−2.0
I
C
(A)
0
I
B
= −13 mA
−10.4 mA
−11.7 mA
−9.1 mA
−6.5 mA
−3.9 mA
−5.2 mA
−2.6 mA
−1.3 mA
−7.8 mA
006aaa433
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
10
1
10
2
10
3
R
CEsat
(Ω)
10
−1
(1)
(2)
(3)