Datasheet

PBSS5220V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 14 December 2009 5 of 13
NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= 20 V; I
E
=0A - - 0.1 μA
V
CB
= 20 V; I
E
=0A;
T
j
= 150 °C
--50 μA
I
CES
collector-emitter cut-off
current
V
CE
= 20 V; V
BE
=0V - - 0.1 μA
I
EBO
emitter-base cut-off
current
V
EB
= 5V; I
C
=0A - - 0.1 μA
h
FE
DC current gain V
CE
= 2V; I
C
= 1 mA 220 495 -
V
CE
= 2V; I
C
= 100 mA 220 440 -
V
CE
= 2V; I
C
= 500 mA
[1]
220 310 -
V
CE
= 2V; I
C
= 1A
[1]
155 220 -
V
CE
= 2V; I
C
= 2A
[1]
60 120 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 1mA - 50 80 mV
I
C
= 500 mA; I
B
= 50 mA
[1]
- 75 115 mV
I
C
= 1A; I
B
= 50 mA
[1]
- 155 220 mV
I
C
= 1A; I
B
= 100 mA
[1]
- 140 210 mV
I
C
= 2A; I
B
= 100 mA
[1]
- 305 455 mV
I
C
= 2A; I
B
= 200 mA
[1]
- 265 390 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 1A; I
B
= 100 mA
[1]
-140210mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= 1A; I
B
= 50 mA
[1]
- 0.95 1.1 V
I
C
= 1A; I
B
= 100 mA
[1]
- 1 1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
= 5V; I
C
= 1A - 0.8 1V
t
d
delay time I
C
= 1A; I
Bon
= 50 mA;
I
Boff
=50mA
-8-ns
t
r
rise time - 34 - ns
t
on
turn-on time - 42 - ns
t
s
storage time - 140 - ns
t
f
fall time - 45 - ns
t
off
turn-off time - 185 - ns
f
T
transition frequency V
CE
= 10 V; I
C
= 50 mA;
f = 100 MHz
150 185 - MHz
C
c
collector capacitance V
CB
= 10 V; I
E
=i
e
=0A;
f=1MHz
- 1520pF