Datasheet

PBSS5220V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 14 December 2009 3 of 13
NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low V
CEsat
(BISS) transistor
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[4] Reflow soldering is the only recommended soldering method.
T
amb
ambient temperature 65 +150 °C
T
stg
storage temperature 65 +150 °C
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
(°C)
0 16012040 80
006aaa424
0.4
0.8
1.2
P
tot
(W)
0
(1)
(2)
(3)