Datasheet

PBSS5220V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 14 December 2009 2 of 13
NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1 collector
2 collector
3base
4emitter
5 collector
6 collector
123
456
4
3
1, 2, 5, 6
sym030
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5220V - plastic surface mounted package; 6 leads SOT666
Table 4. Marking codes
Type number Marking code
PBSS5220V N7
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 20 V
V
CEO
collector-emitter voltage open base - 20 V
V
EBO
emitter-base voltage open collector - 5V
I
C
collector current - 2A
I
CM
peak collector current t
p
300 μs-4A
I
B
base current - 0.3 A
I
BM
peak base current t
p
300 μs-0.6 A
P
tot
total power dissipation T
amb
25 °C
[1][4]
-0.3W
[2][4]
-0.5W
[3][4]
-0.9W
T
j
junction temperature - 150 °C