Datasheet

2003 Dec 18 4
NXP Semiconductors Product data sheet
20 V, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5220T
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified
Note
1. Pulse test: t
p
≤ 300 μs, δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −20 V; I
E
= 0 − − −100 nA
V
CB
= −20 V; I
E
= 0; T
j
= 150 °C − − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −100 mA 225 − −
V
CE
= −2 V; I
C
= −500 mA 225 − −
V
CE
= −2 V; I
C
= −1 A; note 1 200 − −
V
CE
= −2 V; I
C
= −2 A; note 1 150 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= −500 mA; I
B
= −50 mA − − −80 mV
I
C
= −1A; I
B
= −50 mA − − −150 mV
I
C
= −2A; I
B
= −100 mA; note 1 − − −250 mV
I
C
= −2A; I
B
= −200 mA; note 1 − − −225 mV
R
CEsat
equivalent on-resistance I
C
= −2 A; I
B
= −200 mA; note 1 − − 113 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= −2 A; I
B
= −100 mA; note 1 − − −1.1 V
V
BEon
base-emitter turn on voltage V
CE
= −2 V; I
C
= −1 A; note 1 −1.2 − − V
f
T
transition frequency V
CE
= −5 V; I
C
= −100 mA; f = 100 MHz 100 − − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0; f = 1 MHz − − 50 pF