Datasheet

PBSS5160V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 14 December 2009 8 of 14
NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low V
CEsat
(BISS) transistor
T
amb
=25°C
(1) I
B
= −40 mA
(2) I
B
= −36 mA
(3) I
B
= −32 mA
(4) I
B
= −28 mA
(5) I
B
= −24 mA
(6) I
B
= −20 mA
(7) I
B
= −16 mA
(8) I
B
= −12 mA
(9) I
B
= −8mA
(10) I
B
= −4mA
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
Fig 10. Equivalent on-resistance as a function of
collector current; typical values
V
CE
(V)
0 −5−4−2 −3−1
001aaa716
−0.8
−1.2
−0.4
−1.6
−2
I
C
(A)
0
(1)(2)(3)(4)(5)
(10)
(9)
(6)
(9)
(8)
(7)
(6)
001aaa720
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(2)
(1)
(3)