Datasheet

PBSS5160V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 14 December 2009 5 of 14
NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
Table 7. Characteristics
T
amb
= 25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off current V
CB
= −60 V; I
E
=0A - - −100 nA
V
CB
= −60 V; I
E
=0A;
T
j
= 150 °C
--−50 μA
I
CES
collector-emitter cut-off current V
CE
= −60 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off current V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5V; I
C
= −1 mA 200 350 -
V
CE
= −5V; I
C
= −500 mA
[1]
150 250 -
V
CE
= −5V; I
C
= −1A
[1]
100 160 -
V
CEsat
collector-emitter saturation
voltage
I
C
= −100 mA; I
B
= −1mA - −110 −160 mV
I
C
= −500 mA; I
B
= −50 mA - −120 −175 mV
I
C
= −1A; I
B
= −100 mA
[1]
- −220 −330 mV
V
BEsat
base-emitter saturation voltage I
C
= −1A; I
B
= −50 mA - −0.95 −1.1 V
R
CEsat
equivalent on-resistance I
C
= −1A; I
B
= −100 mA
[1]
- 220 330 mΩ
V
BEon
base-emitter turn-on voltage I
C
= −1A; V
CE
= −5V - −0.82 −0.9 V
t
d
delay time V
CC
= −10 V; I
C
= −0.5 A;
I
Bon
= −0.025 A;
I
Boff
= 0.025 A
-11-ns
t
r
rise time - 30 - ns
t
on
turn-on time - 41 - ns
t
s
storage time - 205 - ns
t
f
fall time - 55 - ns
t
off
turn-off time - 260 - ns
f
T
transition frequency I
C
= −50 mA; V
CE
= −10 V;
f=100MHz
150 220 - MHz
C
c
collector capacitance I
E
=i
e
=0A; V
CB
= −10 V;
f=1MHz
- 9 15 pF