Datasheet

PBSS5160V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 14 December 2009 3 of 14
NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low V
CEsat
(BISS) transistor
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
6. Thermal characteristics
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
(1) FR4 PCB; 1 cm
2
collector mounting pad
(2) FR4 PCB; standard footprint
Fig 1. Power derating curves
T
amb
(°C)
0 16012040 80
001aaa714
0.2
0.4
0.6
P
tot
(W)
0
(1)
(2)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--415K/W
[2]
--250K/W