Datasheet

PBSS5160V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 14 December 2009 2 of 14
NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1, 2, 5, 6 collector
3base
4emitter
123
456
4
3
1, 2, 5, 6
sym030
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5160V - plastic surface mounted package; 6 leads SOT666
Table 4. Marking codes
Type number Marking code
PBSS5160V 51
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −80 V
V
CEO
collector-emitter
voltage
open base - −60 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current (DC)
[1]
- −0.9 A
[2]
- −1A
I
CM
peak collector current t = 1 ms or limited
by T
j(max)
- −2A
I
B
base current (DC) - −300 mA
I
BM
peak base current t
p
≤ 300 μs; δ ≤ 0.02 - −1A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 300 mW
[2]
- 500 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C