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1. Product profile

1.1 General description

PNP low V

CEsat

Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic

package.

NPN complement: PBSS4160V.

1.2 Features

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High efficiency leading to less heat generation

 Reduces printed-circuit board area required

 Cost effective replacement for medium power transistors BCP52 and BCX52

1.3 Applications

 Major application segments

 Automotive

 Telecom infrastructure

 Industrial

 Power management

 DC-to-DC conversion

 Supply line switching

 Peripheral driver

 Driver in low supply voltage applications (e.g. lamps and LEDs)

 Inductive load driver (e.g. relays, buzzers and motors)

1.4 Quick reference data

[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.

PBSS5160V

60 V, 1 A PNP low V

CEsat

(BISS) transistor

Rev. 03 — 14 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −60 V

collector current (DC)

[1]

--−1A

peak collector current - - −2A

CEsat

equivalent on-resistance I

= −1A;

= −100 mA

-220330mΩ

Summary of content (14 pages)

PAGE 1
PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. 1.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1, 2, 5, 6 collector 3 base 4 emitter Simplified outline 6 5 Symbol 1, 2, 5, 6 4 3 4 1 2 sym030 3 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5160V - plastic surface mounted package; 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code PBSS5160V 51 5.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor [1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. 001aaa714 0.6 Ptot (W) (1) 0.4 (2) 0.2 0 0 40 80 120 160 Tamb (°C) (1) FR4 PCB; 1 cm2 collector mounting pad (2) FR4 PCB; standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 001aaa715 103 Zth (K/W) (1) (2) (3) (4) (5) 102 (6) (7) (8) (9) 10 (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 PCB; standard footprint (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 2. Transient thermal impedance as a function of pulse time; typical values PBSS5160V_3 Product data sheet © NXP B.V. 2009.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 001aaa719 600 hFE 001aaa717 −1.2 VBE (V) (1) (1) −0.8 400 (2) (2) (3) 200 −0.4 (3) 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) VCE = −5 V −1 −102 −103 −104 IC (mA) VCE = −5 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 3. −10 DC current gain as a function of collector current; typical values 001aaa718 −10 Fig 4.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 001aaa722 −1.2 VBEsat (V) 001aaa723 −1.2 VBEsat (V) (1) (1) −0.8 −0.8 (2) (2) (3) (3) −0.4 −0.4 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 IC/IB = 10 IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 7. Base-emitter saturation voltage as a function of collector current; typical values Fig 8.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor −2 IC (A) (5) (4) −1.6 (3) (2) 001aaa716 (1) 001aaa720 103 (6) RCEsat (Ω) (6) (7) 102 (8) −1.2 (9) (9) −0.8 10 (10) (1) (2) 1 −0.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 11. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −10 V; IC = −0.5 A; IBon = −0.025 A; IBoff = 0.025 A Fig 12.
PAGE 10
PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 8. Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity PBSS5160V SOT666 4 mm pitch, 8 mm tape and reel -115 3000 [1] For further information and the availability of packing methods, see Section 12. PBSS5160V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5160V_3 20091214 Product data sheet - PBSS5160V_2 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS5160V NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .