Datasheet

PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 9 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low V
CEsat
(BISS) transistor
8. Test information
Fig 13. BISS transistor switching time definition
I
C
= 0.5 A; I
Bon
=25mA; I
Boff
= −25 mA; R1 = open; R2 = 100 Ω; R
B
= 300 Ω; R
C
= 20 Ω
Fig 14. Test circuit for switching times
006aaa003
I
Bon
(100 %)
I
B
input pulse
(idealized waveform)
I
Boff
90 %
10 %
I
C
(100 %)
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
R
C
R2
R1
DUT
mlb826
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC