Datasheet

PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 8 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
T
amb
= 25 °CT
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa509
0.6
0.8
0.4
1.0
1.2
V
BEsat
(V)
0.2
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(3)
(2)
(1)
006aaa510
I
C
(mA)
10
−1
10
4
10
3
110
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(3)
(2)
(1)
006aaa511
V
CE
(V)
05312 4
0.8
1.2
0.4
1.6
2.0
I
C
(A)
0
I
B
(mA) = 65.0
13.0
6.5
58.5
52.0
26.0
39.0
45.5
32.5
19.5
006aaa512
I
C
(mA)
10
−1
10
4
10
3
110
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(3)
(2)
(1)