Datasheet

PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 6 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
Table 7. Characteristics
T
amb
= 25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=60V; I
E
= 0 A - - 100 nA
V
CB
=60V; I
E
=0A;
T
j
=150°C
--50μA
I
CES
collector-emitter cut-off
current
V
CE
=60V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base cut-off current V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V; I
C
= 1 mA 250 500 -
V
CE
=5V; I
C
=500mA
[1]
200 420 -
V
CE
=5V; I
C
=1A
[1]
100 180 -
V
CEsat
collector-emitter saturation
voltage
I
C
= 100 mA; I
B
= 1 mA - 90 115 mV
I
C
= 500 mA;
I
B
=50mA
- 120 150 mV
I
C
=1A; I
B
=100mA
[1]
- 230 280 mV
R
CEsat
collector-emitter saturation
resistance
I
C
=1A; I
B
=100mA
[1]
- 230 280 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
=1A; I
B
=50mA
[1]
- 0.95 1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
=5V; I
C
=1A
[1]
- 0.85 0.9 V
t
d
delay time I
C
=0.5A;
I
Bon
=25mA;
I
Boff
= −25 mA
-11-ns
t
r
rise time - 78 - ns
t
on
turn-on time - 90 - ns
t
s
storage time - 340 - ns
t
f
fall time - 160 - ns
t
off
turn-off time - 500 - ns
f
T
transition frequency V
CE
=10V;
I
C
=50mA;
f=100MHz
150 220 - MHz
C
c
collector capacitance V
CB
=10V;
I
E
=i
e
=0A; f=1MHz
- 5.5 10 pF