Datasheet

PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 5 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low V
CEsat
(BISS) transistor
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
006aaa503
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0.20
0.10
0.05
0.02
0.01
0
δ = 1
0.75
0.50
0.33
006aaa504
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0.20
0.10
0.05
0.02
0.01
0
δ = 1
0.75
0.50
0.33