Datasheet

PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 3 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low V
CEsat
(BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 80 V
V
CEO
collector-emitter voltage open base - 60 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current (DC)
[1]
-750mA
[2]
-930mA
[3]
-1A
I
CM
peak collector current single pulse; t
p
≤ 1ms - 2 A
I
B
base current (DC) - 300 mA
I
BM
peak base current single pulse; t
p
≤ 1ms - 1 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-250mW
[2]
-350mW
[3]
-415mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
006aaa501
T
amb
(°C)
0 16012040 80
0.2
0.3
0.1
0.4
0.5
P
tot
(W)
0
(3)
(2)
(1)