Datasheet
PBSS5160T_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 15 January 2010 5 of 11
NXP Semiconductors
PBSS5160T
60 V, 1 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −60 V; I
E
=0A - - −100 nA
V
CB
= −60 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −60 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5V
I
C
= −1 mA 200 350 -
I
C
= −500 mA
[1]
150 250 -
I
C
= −1A
[1]
100 160 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −100 mA; I
B
= −1mA - −110 −160 mV
I
C
= −500 mA;
I
B
= −50 mA
- −120 −175 mV
I
C
= −1A; I
B
= −100 mA
[1]
- −220 −330 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −1A; I
B
= −100 mA
[1]
- 220 330 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −50 mA - −0.95 −1.1 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −5V; I
C
= −1A - −0.82 −0.9 V
f
T
transition frequency V
CE
= −10 V;
I
C
= −50 mA; f = 100 MHz
150 220 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-915pF