Datasheet
PBSS5160T_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 15 January 2010 4 of 11
NXP Semiconductors
PBSS5160T
60 V, 1 A PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Operated under pulse conditions: duty cycle δ≤20 %, pulse width t
p
≤ 10 ms.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--465K/W
[2]
--312K/W
[1][3]
--100K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance as a function of pulse duration; typical values
mle127
10
3
10
2
10
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
Z
th
(K/W)
t
p
(s)
10 10
2
10
3
δ = 1
0.75
0.33
0.05
0.02
0.01
0
0.5
0.2
0.1