Datasheet
PBSS5160T_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 15 January 2010 2 of 11
NXP Semiconductors
PBSS5160T
60 V, 1 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2emitter
3 collector
12
3
0
06aab2
59
2
1
3
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5160T - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PBSS5160T *U6
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −80 V
V
CEO
collector-emitter
voltage
open base - −60 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current
[1]
- −0.9 A
[2]
- −1A
I
CM
peak collector current t = 1 ms or limited
by T
j(max)
- −2A
I
B
base current - −300 mA
I
BM
peak base current t
p
≤ 300 μs; δ≤0.02 - −1A