Datasheet
2001 Jul 20 2
NXP Semiconductors Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5140U
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Enhanced performance over SOT23 1A standard
packaged transistor.
APPLICATIONS
• General purpose switching and muting
• LCD back lighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT323 (SC-70) plastic
package.
MARKING
TYPE NUMBER MARKING CODE
PBSS5140U 51t
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
Fig.1 Simplified outline (SOT323; SC-70) and
symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −40 V
I
CM
peak collector current −2 A
R
CEsat
equivalent on-resistance <500 mΩ