Datasheet

PBSS5140T_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 July 2008 5 of 13
NXP Semiconductors
PBSS5140T
40 V, 1 A PNP low V
CEsat
BISS transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −40 V; I
E
=0A - - −100 nA
V
CB
= −40 V; I
E
=0A;
T
j
= 150 °C
--−50 µA
I
CEO
collector-emitter
cut-off current
V
CE
= −30 V; I
B
=0A - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5 V; I
C
= −1 mA 300 - -
V
CE
= −5 V; I
C
= −100 mA 300 - 800
V
CE
= −5 V; I
C
= −500 mA
[1]
250 - -
V
CE
= −5 V; I
C
= −1A
[1]
160 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −100 mA; I
B
= −1mA - - −200 mV
I
C
= −500 mA; I
B
= −50 mA
[1]
--−250 mV
I
C
= −1 A; I
B
= −100 mA
[1]
--−500 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −500 mA; I
B
= −50 mA
[1]
- 300 < 500 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1 A; I
B
= −50 mA
[1]
--−1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −5 V; I
C
= −1A - - −1V
t
d
delay time V
CC
= −10 V; I
C
= −0.5 A;
I
Bon
= −25 mA;
I
Boff
=25mA
-10-ns
t
r
rise time - 31 - ns
t
on
turn-on time - 41 - ns
t
s
storage time - 195 - ns
t
f
fall time - 65 - ns
t
off
turn-off time - 260 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −50 mA;
f = 100 MHz
150 - - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
--12pF