Datasheet

PBSS5140T_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 July 2008 2 of 13
NXP Semiconductors
PBSS5140T
40 V, 1 A PNP low V
CEsat
BISS transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
2 emitter
3 collector
12
3
006aab259
2
1
3
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5140T - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PBSS5140T *2H
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −40 V
V
CEO
collector-emitter voltage open base - −40 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −1A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −2A
I
BM
peak base current single pulse;
t
p
≤ 1ms
- −1A