Datasheet

NXP Semiconductors
PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor
PBSS5130T All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 July 2013 8 / 11
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PBSS5130T v.2 20130709 Product data sheet - PBSS5130T v.1
Modifications:
•
The format of this document has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
•
Sections "General description", "Features and benefits" and "Applications": updated
•
Section "Marking": updated
•
Table "Limiting values": ambient temperature T
amb
updated
•
Table "Characteristics": base-emitter saturation voltage V
BEsat
added
•
Figures 1 to 6: added
•
Section "Test information": added
•
Figure "Package outline TO-236AB (SOT23)": replaced by minimized outline drawing
•
Section "Soldering": added
•
Section "Legal information": updated
PBSS5130T v.1 20031212 Product data sheet - -