Datasheet
NXP Semiconductors
PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor
PBSS5130T All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 July 2013 6 / 11
aaa-006398
-10
2
-10
-10
3
V
CEsat
(mV)
-1
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 5. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-006406
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 6. Collector-emitter saturation resistance as a
function of collector current; typical values
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
1 2
3
Fig. 7. Package outline TO-236AB (SOT23)